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M050B 2808F XLC30A11 S024C SHD11 93AA86C Q6025L6 FMMT5400
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  Datasheet File OCR Text:
 SMD Type
Medium Power Transistor FMMTL717
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
Features
+0.1 2.4-0.1
Very low equivalent on-resistance;RCE(sat)=160mU at 1.25A.
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak pulse current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO IC ICM IB Ptot Tj,Tstg Rating -12 -12 -5 -1.25 -4 -200 -500 -55 to +150 Unit V V V A A mA mW
+0.1 0.38-0.1
0-0.1
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1
SMD Type
FMMTL718
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-base cut-off current Emitter-base current Symbol V(BR)CBO IC=-100iA V(BR)CEO IC=-10mA* V(BR)EBO IE=-100iA ICBO IEBO VCB=-10V VEB=-4V Testconditons
Transistors IC
Min -12 -12 -5
Typ -35 -25 -8.5
Max
Unit V V V
-10 -10 -24 -94 -160 -200 -40 -140 -240 -290
nA nA
Collector-emitter saturation voltage
IC=-100mA, IB=-10mA* IC=-500mA, IB=-20mA* VCE(sat) IC=-1A, IB=-50mA* IC=-1.25A,IB=-50mA VBE(sat) IC=-1.25A, IB=-50mA* VBE(on) IC=-1.25A, VCE=-2V* IC=-10mA, VCE=-2V IC=-100mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-3A, VCE=-2V* IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz IC=-1A, VCC=-10V IB1=IB2=-10mA 300 300 180 100 50
mV
Base-emitter saturation voltage Base-emitter ON voltage
-970 -1100 -875 490 450 275 180 110 205 15 76 149 20 -1000
mV mV
DC current gain
hFE
Current-gain-bandwidth product Output capacitance Turn-on time Turn-off time * Pulse test: tp 300 is; d 0.02.
fT Cobo t(on) t(off)
MHz pF ns ns
Marking
Marking L77
2
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